REATISS: V-NAND Flash - Samsung K9HQGY8S5M / K9LPGY8S1M / K9ADGD8S0A

REATISS has performed Process Analysis (CA) on this new flash memory of Samsung SSD 850 Pro
Samsung K9HQGY8S5M / K9LPGY8S1M / K9ADGD8S0A.

STEM section view of channel holes and control gates - Samsung K9HQGY8S5M / K9LPGY8S1M / K9ADGD8S0A

STEM section view of vertical FET - Samsung K9HQGY8S5M / K9LPGY8S1M / K9ADGD8S0A

STEM top-down section view of channel holes - Samsung K9HQGY8S5M / K9LPGY8S1M / K9ADGD8S0A

SEM image of V-NAND array edge cross-section along word lines - Samsung K9HQGY8S5M / K9LPGY8S1M / K9ADGD8S0A